Samsung unveiled its latest memory technology, Shinebolt HBM3E, at the annual Memory Tech Day event in San Jose. This new technology promises higher memory capacity and bandwidth for high-end processors compared to the current HBM3 standard.
Using Samsung’s D1a process, Shinebolt will be available in both 8Hi and 12Hi stacks, offering capacities of 24GB and 36GB respectively. The memory clock speeds of Shinebolt can reach up to 9.8Gbps/pin, over 50% faster than Samsung’s previous HBM3 products. This puts them ahead of competitors SK hynix and Micron, who have announced speeds of 9Gbps/pin and 9.2Gbps/pin respectively.
Shinebolt will provide a minimum bandwidth of 1TB/sec and a maximum bandwidth of 1.225TB/sec. It is expected to be more power-efficient than its predecessor, Icebolt, but the increase in clock speed will result in higher power consumption.
The target market for Shinebolt is high-end processors, particularly in the AI sector where memory bandwidth and capacity are crucial. Samsung plans to start shipping Shinebolt in 2024 after completing the development stage.
In addition to Shinebolt, Samsung also discussed their plans for HBM4 memory, which will feature a wider, 2048-bit memory interface. They intend to incorporate more advanced technologies such as FinFET transistors and direct copper-to-copper bonding.
Samsung also provided an update on their GDDR7 memory, which offers several improvements over GDDR6. It employs PAM3 encoding to enable higher memory transfer rates, consumes 50% less standby power, and delivers a 20% improvement in power efficiency. Samsung foresees GDDR7 being adopted by AI chip makers and the automotive industry, with mass production set to begin in 2024.
Overall, Samsung’s Memory Tech Day unveiled significant advancements in memory technology. Shinebolt HBM3E and GDDR7 will enhance performance and efficiency in high-end processors, further solidifying Samsung’s position as a leader in the field.
